Understanding the roughening and degradation of 193 nm photoresist during plasma processing: synergistic roles of vacuum ultraviolet radiation and ion bombardment

Plasma Processes and Polymers

Volumn 6, Issue 10, 2009, Pages 649-657

  Nest, Dustin ^a   Chung, Ting Ying ^a   Graves, David B ^a   Engelmann, Sebastian ^b   Bruce, Robert L ^b   Weilnboeck, Florian ^b   Oehrlein, Gottlieb S ^b   Wang, Deyan ^c   Andes, Cecily ^c   Hudson, Eric A ^d  

^a University of California   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c ROHM AND HAAS COMPANY   (United States)

^d LAM RESEARCH CORPORATION   (United States)

Author keywords

Ion bombardment; Photoresists; Plasma etching; Roughness; Surfaces; Vuv irradiation

Indexed keywords

193 NM PHOTORESISTS; BEAM SYSTEM; BULK MODIFICATION; CARBON-OXYGEN BONDS; ELEVATED LEVEL; ELEVATED TEMPERATURE; ETCH RATES; FTIR; NEAR SURFACE REGIONS; NEW TECHNOLOGIES; PATTERN TRANSFERS; PLASMA PROCESSING; PLASMA-INDUCED; ROUGHNESS SURFACES; SUBSTRATE HEATING; SURFACE LAYERS; THROUGH TRANSMISSION; VACUUM ULTRAVIOLET RADIATION; VUV IRRADIATION; VUV RADIATION;

CHEMICAL MODIFICATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; IONS; MECHANICAL PROPERTIES; METAL ANALYSIS; OXYGEN; PHOTORESISTORS; PHOTORESISTS; PLASMA DIAGNOSTICS; PLASMA ETCHING; PLASMAS; SURFACE PROPERTIES; SURFACE ROUGHNESS; SURFACE TREATMENT; ULTRAVIOLET RADIATION; VACUUM;

ION BOMBARDMENT;

EID: 70450212879     PISSN: 16128850     EISSN: 16128869     Source Type: Journal    
DOI: 10.1002/ppap.200900039     Document Type: Article

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