Effect of oxygen plasma treatment on low dielectric constant carbon-doped silicon oxide thin films

Thin Solid Films

Volumn 473, Issue 1, 2005, Pages 132-136

  Wang, Y H ^a   Kumar, R ^a   Zhou, X ^b   Pan, J S ^b   Chai, J W ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Dielectrics; Low dielectric constant; Oxygen plasma; PE CVD; Thin film

Indexed keywords

CARBON; DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXYGEN; PERMITTIVITY; PHOTORESISTS; PLASMAS; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW DIELECTRIC CONSTANT; MULTILEVEL INTERCONNECTIONS; OXYGEN PLASMA;

THIN FILMS;

EID: 9644257249     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.07.076     Document Type: Article

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