Effect of plasma treatments on ultra low-k material properties

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 399-404

  Humbert, A ^a   Mage, L ^c   Goldberg, C ^b   Junker, K ^b   Proenca, L ^d   Lhuillier, J B ^d  

^a NXP SEMICONDUCTORS   (Netherlands)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c Applied Materials France   (France)

^d STMICROELECTRONICS   (France)

Author keywords

Adhesion; Interface; Low k; Plasma treatment; Porous

Indexed keywords

ADHESION; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MODIFICATION; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; THIN FILMS;

INTERFACE; LOW-K; PLASMA TREATMENT; POROUS;

DIELECTRIC MATERIALS;

EID: 28044466192     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.022     Document Type: Conference Paper

References (9)

1. K. Maex Journal of Applied physics 93 11 2003 8793
2. A. Grill Thin solid film 398-399 2001 527 532
3. C.K. Goldberg, V.S. Wang, Dielectric Film for Semiconductor Application (Chapter 4).
4. C.-H. Chen, and F.-S. Huang Thin Solid Films 441 2003 248 254
5. Y.W. Hang Electrochemical and Solid State letters 6 1 2003 F1 F3
6. D. Shamiryan Microelectronic Engineering 64 2002 361 366
7. Y. Zhou et al, Characterisation and Metrology for ULSI Technology, vol. CP683, 2003, p. 455.
8. A. Grill, and V. Patel Journal of the Electrochemical Society 151 6 2004 F133 F134
9. Q. Ma, C. Pan, H. Fujimoto, B. Triplett, P. Coon, and C. Chiang Material Research Society Symposium Proceedings 436 1997 379 384