Absolute vacuum ultraviolet flux in inductively coupled plasmas and chemical modifications of 193 nm photoresist

Applied Physics Letters

Volumn 94, Issue 17, 2009, Pages

  Titus, M J ^a   Nest, D ^a   Graves, D B ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

193 NM PHOTORESISTS; ALTERNATIVE METHODS; ARGON PLASMAS; CHEMICAL CHANGES; FLUENCE; PLASMA PROCESSING; SI WAFERS; VACUUM ULTRA VIOLETS; XENON LAMPS;

ARGON; CHEMICAL MODIFICATION; ELECTRIC LAMPS; GATE DIELECTRICS; GATES (TRANSISTOR); PHOTORESISTORS; PHOTORESISTS; PHYSICAL VAPOR DEPOSITION; PRASEODYMIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE CHEMISTRY; SURFACE TREATMENT; VACUUM; XENON;

INDUCTIVELY COUPLED PLASMA;

EID: 65449173961     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3125260     Document Type: Article

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