Fabrication processes for capacity-equalized mold with fine patterns

Japanese Journal of Applied Physics

Volumn 50, Issue 6 PART 2, 2011, Pages

  Suzuki, Kenta ^a,b,c   Youn, Sung Won ^b,c   Wang, Qing ^b,c   Hiroshima, Hiroshi ^b,c   Nishioka, Yasushiro ^a  

^a NIHON UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION PROCESS; FINE PATTERN; NANO-METER SCALE; PATTERN DENSITY; PATTERN SIZE; RESIDUAL LAYER THICKNESS; SI WAFER; SUB-100 NM; UV NANOIMPRINT LITHOGRAPHY; UV-NANOIMPRINT;

ELECTRON BEAMS; FABRICATION; NANOIMPRINT LITHOGRAPHY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

MOLDS;

EID: 79959447553     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.06GK04     Document Type: Article

References (27)

1. J. Haisma, M. Verheijen, K. Heuvel, and J. Berg: J. Vac. Sci. Technol. B 14 (1996) 4124.
2. M. Colburn, S. Johnson, M. Stewart, S. Damle, T. Bailey, B. Choi, M. Wedlake, T. Michaelson, S. V. Sreenivasan, J. Ekerdt, and C. G. Willson: Proc. SPIE 3676 (1999) 379.
3. M. Komuro, J. Taniguchi, S. Inoue, N. Kimura, Y. Tokano, H. Hiroshima, and S. Matsui: Jpn. J. Appl. Phys. 39 (2000) 7075.
4. D. J. Resnick, W. J. Dauksher, D. Mancini, K. J. Nordquist, T. C. Bailey, S. Johnson, N. Stacey, J. G. Ekerdt, C. G. Willson, S. V. Sreenivasan, and N. Schumaker: J. Vac. Sci. Technol. B 21 (2003) 2624.
5. G. M. Schmid, M. Miller, C. Brooks, N. Khusnatdinov, D. LaBrake, D. J. Resnick, S. V. Sreenivasan, G. Gauzner, K. Lee, D. Kuo, D. Weller, and X. M. Yang: J. Vac. Sci. Technol. B 27 (2009) 573.
6. H. Hiroshima, Q. Wang, and S.-W. Youn: J. Vac. Sci. Technol. B 28 (2010) C6M12.
7. S. H. Kim, H. Hiroshima, S. Inoue, Y. Kurashima, and M. Komuro: Jpn. J. Appl. Phys. 43 (2004) 4022.
8. H. Schultz, M. Wissen, and H.-C. Scheer: Microelectron. Eng. 67-68 (2003) 657.
9. H. Hiroshima and H. Atobe: Jpn. J. Appl. Phys. 48 (2009) 06FH18.
10. P. C. Hidber, W. Helbig, E. Kim, and G. M. Whitesides: Langmuir 12 (1996) 1375.
11. W. M. Lackowski, P. Ghosh, and R. M. Crooks: J. Am. Chem. Soc. 121 (1999) 1419.
12. M. Miller, G. Doyle, N. Stacey, F. Xu, S. V. Sreenivasan, M. Watts, and D. L. LaBrake: Proc. SPIE 5751 (2005) 994.
13. M. Otto, M. Bender, B. Hadam, B. Spangenberg, and H. Kurz: Microelectron. Eng. 57-58 (2001) 361.
14. T. Bailey, B. J. Choi, M. Colburn, M. Meissl, S. Shaya, J. G. Ekerdt, S. V. Sreenivasan, and C. G. Willson: J. Vac. Sci. Technol. B 18 (2000) 3572.
15. M. Colburn, A. Grot, M. Amistoso, B. J. Choi, T. Bailey, J. Ekerdt, S. V. Sreenivasan, J. Hollenhorst, and C. G. Willson: Proc. SPIE 3997 (2000) 453.
16. F. Lazzarino, C. Gourgon, P. Schiavone, and C. Perret: J. Vac. Sci. Technol. B 22 (2004) 3318.
17. H. Hiroshima: Jpn. J. Appl. Phys. 47 (2008) 8098.
18. H. Hiroshima: Microelectron. Eng. 86 (2009) 611.
19. L. J. Myron, L. Gershtein, G. Gottlieb, B. Burkhardt, A. Griffiths, D. Mellenthin, K. Rentzsch, S. MacDonald, and G. Hughes: Proc. SPIE 5752 (2005) 384.
20. G. M. Schmid, E. Thompson, N. Stacey, D. J. Resnick, D. L. Olynick, and E. H. Anderson: Microelectron. Eng. 84 (2007) 853.
21. T. Hiraka, J. Mizuochi, Y. Nakanishi, S. Yusa, S. Sasaki, Y. Morikawa, H. Mohri, and N. Hayashi: Proc. SPIE 7379 (2009) 73792S.
22. J. Taniguchi, T. Kawasaki, Y. Takano, Y. Kogo, I. Miyamoto, M. Komuro, H. Hiroshima, N. Sakai, and K. Tada: Jpn. J. Appl. Phys. 41 (2002) 4194.
23. H. Hiroshima and M. Komuro: Jpn. J. Appl. Phys. 46 (2007) 6391.
24. S.-W. Youn, Q. Wang, and H. Hiroshima: Jpn. J. Appl. Phys. 49 (2010) 06GL06.
25. H. Hiroshima: Jpn. J. Appl. Phys. 45 (2006) 5602.
26. C. Hedlund, H.-O. Blom, and S. Berg: J. Vac. Sci. Technol. A 12 (1994) 1962.
27. S. Jensen and O. Hansen: Proc. SPIE 5342 (2003) 111.