Homogeneity of residual layer thickness in UV nanoimprint lithography

Japanese Journal of Applied Physics

Volumn 48, Issue 6 PART 2, 2009, Pages

  Hiroshima, Hiroshi ^a,b   Atobe, Hidemasa ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT MECHANISM; NANO-IMPRINT; PATTERN DENSITY; PRESSING TIME; RESIDUAL LAYER THICKNESS; RESIDUAL LAYERS; UV CURABLE; UV NANOIMPRINT LITHOGRAPHY; UV-NANOIMPRINT;

CURING; MOLDS; RESINS;

NANOIMPRINT LITHOGRAPHY;

EID: 70249102134     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.06FH18     Document Type: Article

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