New perspectives on NBTI in advanced technologies: Modelling & characterization

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 399-402

  Denais, Mickael ^a,c   Huard, Vincent ^b   Parthasarathy, Chittoor ^a,c   Ribes, Guillaume ^a   Perrier, Franck ^b   Roy, David ^a   Bravaix, Alain ^c  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (Netherlands)

^c AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; RELIABILITY THEORY; THERMODYNAMIC STABILITY;

FIXED CHARGES; INTERFACE TRAPPED CHARGES; OXIDE TRAPPED HOLES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 33751430964     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546669     Document Type: Conference Paper

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