Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Grasser, T ^a   Reisinger, H ^c   Goes, W ^a   Aichinger, Th ^d   Hehenberger, Ph ^b   Wagner, P J ^a   Nelhiebel, M ^e   Franco, J ^f   Kaczer, B ^f  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d KAI   (Austria)

^e INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^f IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE STRESS; DEVICE GEOMETRIES; ELECTRICAL BEHAVIORS; NANOSCALE DEVICE; NEGATIVE BIAS TEMPERATURE INSTABILITY; NON EQUILIBRIUM; OXIDE TRAPS; RANDOM TELEGRAPH NOISE; STATISTICAL PROPERTIES; SWITCHING TRAPS; TEMPERATURE DEPENDENCE;

ELECTRIC PROPERTIES; ELECTRON DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; TELEGRAPH; THERMODYNAMIC STABILITY;

DEFECTS;

EID: 77952357554     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424235     Document Type: Conference Paper

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