A comparison of very fast to very slow components in degradation and recovery due to NBTI and bulk hole trapping to existing physical models

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 1, 2007, Pages 119-129

  Reisinger, Hans ^a   Blank, Oliver ^a   Heinrigs, Wolfgang ^a   Gustin, Wolfgang ^a   Schlünder, Christian ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

MOSFET; Negative bias temperature instability (NBTI); Recovery; Relaxation

Indexed keywords

DEGRADATION; MATHEMATICAL MODELS; RECOVERY; RELAXATION PROCESSES; STRESS ANALYSIS; THERMAL EFFECTS;

DEGRADATION DATA; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); PHYSICAL MODELS;

ELECTRON TRAPS;

EID: 34547148329     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.898229     Document Type: Conference Paper

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