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Volumn 48, Issue 10, 2008, Pages 1655-1659

Negative bias temperature instability (NBTI) recovery with bake

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; FIELD EFFECT TRANSISTORS; THERMODYNAMIC STABILITY;

EID: 50949120239     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.04.012     Document Type: Article
Times cited : (31)

References (17)
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    • The negative bias temperature instability in MOS devices: A review
    • Stathis J.H., and Zafar S. The negative bias temperature instability in MOS devices: A review. Microelectron Reliab 46 (2006) 270-286
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    • Negative bias temperature instability: what do we understand?
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    • Schroder, D.K.1
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    • NBTI degradation: from physical mechanisms to modelling
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    • Degradation dynamics, recovery, and characterization of negative bias temperature instability
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    • (2005) Microelectron Reliab , vol.45 , pp. 99-105
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.