Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation

Journal of Applied Physics

Volumn 109, Issue 10, 2011, Pages

  Castrillo, P ^a   Pinacho, R ^a   Jaraiz, M ^a   Rubio, J E ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ANISOTROPIC DIFFUSION; ATOMISTIC MODELS; ATOMISTIC PROCESS SIMULATION; CHARGE EFFECT; CHARGE STATE; COMPOSITION RANGES; DIFFUSION KINETICS; DIFFUSIVITIES; EFFICIENT POINT; EXCHANGE ALGORITHMS; GE ATOM; IMPLEMENTATION SCHEME; INTERSTITIALS; KINETIC MONTE CARLO; LATTICE ATOMS; NATIVE DEFECT; PHYSICAL MODELING; PHYSICAL PARAMETERS; POINT DEFECT TRANSPORT; SI-GE ALLOYS; STRAIN EFFECT; TRANSPORT CAPACITY;

ALGORITHMS; CALCULATIONS; COMPUTER SIMULATION; CRYSTALS; DEFECTS; DIFFUSION; ELECTRONIC PROPERTIES; EXPERIMENTS; GERMANIUM; MODELS; POINT DEFECTS; SILICON;

SILICON ALLOYS;

EID: 79958861778     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3581113     Document Type: Conference Paper

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