Modeling silicon-germanium interdiffusion by the vacancy exchange and interstitial mechanisms

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 6, 2008, Pages 569-576

  Hasanuzzaman, Mohammad ^a   Haddara, Yaser M ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

INTERSTITIAL DIFFUSION; SINGLE QUANTUM WELL STRUCTURE; VACANCY EXCHANGE;

CRYSTAL LATTICES; INTERDIFFUSION (SOLIDS); SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; VACANCIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 41149103530     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9391-5     Document Type: Article

References (49)

1. International Technology Roadmap for Semiconductors (2001) http:// public.itrs.net, access date July 3, 2007
2. U. König, In: IEE colloquium on advances in semiconductor devices, p. 1 (1999)
3. G.D. Shen, J.X. Chen, D.S. Zou, G. Gao, C.X. Du, D.X. Xui, W.X. Ni, M. Willander, G.V. Hansoon, In: 4th International Conference on Solid-State and Integrated Circuit Technology, p. 439 (1995)
4. J.D. Cressler, D.L. Harame, J.H. Comfort, J.M.C. Stork, B.S. Meyerson, T.E. Tice, in IEEE International Solid-State Circuits Conference, p. 24 (1994)
5. C.C. Wang, Y.M. Sheu, S. Liu, R. Duffy, A. Heringa, N.E.B. Cowern, P.B. Griffin, Mat. Sci. Eng. B 124-125, 39 (2005)
6. S. Rizk, Y.M. Haddara, A. Sibaja-Hernandez, J. Vac. Sci. Tech. B 24, 1365 (2006)
7. N.R. Zangenberg, J. Fage-Pedersen, J.L. Hansen, A.N. Larsen, J. Appl. Phys. 94, 3883 (2003)
8. J.M. Bonar, A.F.W. Willoughby, A.H. Dan, B.M. McGregor, W. Lerch, D. Loffelmacher, G.A. Cooke, M.G. Dowsett, J. Mat. Sci. Mater. Electron. 12, 219 (2001)
9. P.K. Chu, D. Zengfeng, M. Zhang, W. Liu, M. Zhu, C. Lin, Mat. Sci. Eng. B 124-125, 153 (2005)
10. M.A. Rabie, Y.M. Haddara, J. Carette, J. Appl. Phys. 98, 74904 (2005)
11. F.K. LeGoues, R. Rosenberg, T. Nguyen, F. Himpsel, B.S. Meyerson, J. Appl. Phys. 65, 1724 (1989)
12. M. Glueck, A. Schueppen, M. Roesler, W. Heinrich, J. Hersener, U. Koenig, O. Yam, C. Cytermann, M. Eizenberg, Thin Solid Films 270, 549 (1995)
13. J. Wan, Y.H. Luo, Z.M. Jiang, G. Jin, J.L. Liu, K.L. Wang, J. Appl. Phys. 90, 4290 (2001)
14. L.J. van Ijzendoorn, G.F.A. van de Walle, A.A. van Gorkum, A.M.L. Theunissen, R.A. van den Heuvel, J.H. Barrett, Nucl. Inst. Met. Phys. Res. B 50, 127 (1990)
15. H. Sunamura, S. Fukatsu, N. Usami, Y. Shiraki, Appl. Phys. Lett. 63, 1651 (1993)
16. H. Sunamura, S. Fukatsu, N. Usami, Y. Shiraki, Jpn. J. Appl. Phys. 33, 2344 (1994)
17. P. Zaumseil, U. Jagdhold, D. Krüger, J. Appl. Phys. 76, 2191 (1994)
18. M.D. Griglione, PhD thesis, University of Florida, USA, 1999
19. M. Griglione, T.J. Anderson, Y.M. Haddara, M.E. Law, K.S. Jones, A. van den Bogaard, J. Appl. Phys. 88, 1366 (2000)
20. M. Griglione, T.J. Anderson, M.E. Law, K.S. Jones, A. van den Bogaard, M.P. Lambers, J. Appl. Phys. 89, 2904 (2001)
21. B. Holländer, R. Butz, S. Mantl, Phys. Rev. B 46, 6975 (1992)
22. D.B. Aubertine, N. Ozguven, P.C. McIntyre, S. Brennan, J. Appl. Phys. 94, 1557 (2003)
23. D.B. Aubertine, P.C. McIntyre, J. Appl. Phys. 97, 013531 (2005)
24. E. Kirkendall, L. Thomassen, and C. Upthegrove, Trans. AIME 133, 186 (1939)
25. S. Wolf, R.N. Tauber, in Silicon Processing for the VLSI Era Volume 1- Process Technology (Lattice Press, Sunset Beach, 1986)
26. H.B. Huntington, F. Seitz, Phys. Rev. 61, 315 (1942)
27. A.D. Smigelskas, E.O. Kirkendall, Trans. AIME 171, 130 (1947)
28. L.S. Darken, Trans. AIME 175, 184 (1984)
29. U.M. Gösele, Ann. Rev. Mat. Sci. 18, 257 (1988)
30. Y.M. Haddara, J.C. Bravman, Ann. Rev. Mat. Sci. 28, 185 (1998)
31. P.M. Fahey, P.B. Griffin, J.D. Plummer, Rev. Modern Phys. 63, 289 (1989)
32. J.D. Plummer, M.D. Deal, P.B. Griffin, in Silicon VLSI Technology: Fundamentals, Practice, and Modeling (Pearson Education, 2000)
33. FLOOPS Manual (University of Florida) version (2002); http:// www.tec.ufl.edu/~flooxs/, access date July 3, 2007
34. FLOOPS-ISE Manual (Release 9.5, Integrated Systems Engineering)
35. M. Hillert, L. Höglund, J. Ågren, J. Appl. Phys. 98, 053511 (2005)
36. C.-Y. Tai, PhD thesis, Stanford University, USA, 1997
37. J. Wan, Y.H. Luo, Z.M. Jiang, G. Jin, J.L. Liu, K.L. Wang, J. Appl. Phys. 90, 4290 (2001)
38. A.R. Denton, N.W. Ashcroft, Phys. Rev. A 43, 3161 (1991)
39. B.L. Sharma, Defect diffusion forum 70-71, 1 (1990)
40. N.R. Zangenberg, J. Lundsgaard, J. Fage-Pedersen, A.N. Larsen, Phys. Rev. Lett. 87, 125901 (2001)
41. Richard J. Borg, G. J. Dienes, in An Introduction to Solid State Diffusion (Academic press, 1998)
42. P. Laitinen, A. Strohm, J. Huikari, A. Nieminen, T. Voss, C. Grodon, I. Riihimäki, M. Kummer, J. Äystö, P. Dendooven, J. Räisänen, W. Frank, the ISOLDE Collaboration, Phys. Rev. Lett. 89, 085902 (2002)
43. P. Ramanarayanan, K. Cho, B.M. Clemens, J. Appl. Phys. 94, 174 (2003)
44. P. Fahey, S.S. Iyer, G.J. Scilla, Appl. Phys. Lett. 54, 843 (1989)
45. U. Gösele, W. Frank, A. Seeger, Appl. Phys. 23, 361 (1980)
46. F.C. Frank, D. Turnbull, Phys. Rev. 104, 617 (1956)
47. J.L. Ngau, P.B. Griffin, J.D. Plummer, J. Appl. Phys. 90, 1768 (2001)
48. M. Hasanuzzaman, Y. M. Haddara, J. Mater. Sci. Mater. Electron., published online (2007), doi: 10.1007/s10854-007-9321-6
49. M. Hasanuzzaman, M.A.Sc. Thesis, McMaster University, Canada (2005)