Strain dependence of Si-Ge interdiffusion in epitaxial Si/Si 1-yGe y/Si heterostructures on relaxed Si 1-xGe x substrates

Applied Physics Letters

Volumn 88, Issue 1, 2006, Pages

  Xia, Guangrui ^a   Olubuyide, Oluwamuyiwa O ^a   Hoyt, Judy L ^a   Canonico, Michael ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL SI/SI 1-YGEY/SI HETEROSTRUCTURES; HIGH MOBILITY DUAL CHANNEL; SI-GE INTERDIFFUSION; TENSILE STRAIN;

COMPRESSIVE STRESS; GERMANIUM; HETEROJUNCTIONS; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SILICON; SUBSTRATES;

INTERDIFFUSION (SOLIDS);

EID: 33645537781     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2158706     Document Type: Article

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