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Volumn 85, Issue 9, 1999, Pages 6440-6446

Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001180989     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370285     Document Type: Article
Times cited : (178)

References (23)
  • 9
    • 0001294042 scopus 로고
    • K. C. Pandey, Phys. Rev. Lett. 57, 2287 (1986); A. Antonelli, S. Ismail-Beigi, E. Kaxiras, and K. C. Pandey, Phys. Rev. B 53, 1310 (1996).
    • (1986) Phys. Rev. Lett. , vol.57 , pp. 2287
    • Pandey, K.C.1
  • 20
    • 3342975609 scopus 로고    scopus 로고
    • International Conference on Simulation of Semiconductor Processes and Devices, September Cambridge, MA
    • C. S. Rafferty, in the International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1997 Technical Digest, September 1997, Cambridge, MA.
    • (1997) SISPAD 1997 Technical Digest
    • Rafferty, C.S.1
  • 21
    • 0002734525 scopus 로고
    • edited by F. F. Y. Wang North-Holland, Amsterdam, The Netherlands
    • R. B. Fair, in Impurity Doping Processes in Silicon, edited by F. F. Y. Wang (North-Holland, Amsterdam, The Netherlands, 1981), p. 315.
    • (1981) Impurity Doping Processes in Silicon , pp. 315
    • Fair, R.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.