Improved binary collision approximation ion implant simulators

Journal of Applied Physics

Volumn 91, Issue 2, 2002, Pages 658-667

  Hernandez Mangas J M ^a   Arias, J ^a   Bailon L ^a   Jaraiz M ^a   Barbolla, J ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; BINARY COLLISION APPROXIMATIONS; CHANNELING CONDITIONS; DAMAGE ACCUMULATION; FITTING PARAMETERS; GAAS; IMPLANTATION DOSE; INTEGRATION ALGORITHM; INTERATOMIC POTENTIAL; ION IMPLANT; ION IMPLANT SIMULATORS; PHYSICAL MODEL; PREDICTION CAPABILITY; SECONDARY ION MASS SPECTROSCOPY; SHALLOW ZONES; STATISTICAL NOISE; TARGET MATERIALS; TARGET SELECTION;

ALGORITHMS; MODELS; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

ACOUSTIC NOISE MEASUREMENT;

EID: 0037080738     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1424052     Document Type: Article

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