High ge content of SiGe channel pMOSFETs on Si (110) surfaces

IEEE Electron Device Letters

Volumn 31, Issue 2, 2010, Pages 141-143

  Lee, M H ^a,d   Chang, S T ^b   Maikap, S ^c   Peng, C Y ^d   Lee, C H ^d  

^a NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

(110); Mobility; Orientation; SiGe; Strain

Indexed keywords

(110); GE CONTENT; P-MOSFETS; SATURATION DRAIN CURRENT; SI(1 0 0); SI(110); SIGE CHANNELS;

DRAIN CURRENT; GERMANIUM; SILICON; SILICON ALLOYS;

HOLE MOBILITY;

EID: 75749084333     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2036138     Document Type: Article

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