Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 101-104

  Collaert, N ^a   Rooyackers, R ^a   Hikavyy, A ^a   Dixit, A ^a   Leys, F ^a   Verheyen, P ^a   Loo, R ^a   Jurczak, M ^a   Biesemans, S ^a  

^a IMEC   (Belgium)

Author keywords

Finfet; GIDL; SEG

Indexed keywords

EPITAXIAL GROWTH; FINS (HEAT EXCHANGE); IMPACT RESISTANCE; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS;

AND GATES; DRAIN LEAKAGES; FINFET; GATE DEVICES; GIDL; PMOS DEVICES; SEG; SELECTIVE EPITAXIAL GROWTHS; SIGNIFICANT REDUCTIONS; SOURCE/DRAIN RESISTANCES; TECHNOLOGY NODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54849427031     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.031     Document Type: Article

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