Silicon interstitial injection during dry oxidation of SiGe/Si layers

Journal of Applied Physics

Volumn 97, Issue 3, 2005, Pages

  Napolitani, E ^a   Di Marino, M ^a   De Salvador, D ^a   Camera, A ^a   Spadafora, M ^b   Mirabella, S ^b   Terrasi, A ^b   Scalese, S ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

INTERSTITIAL INJECTION; OXIDATION ENHANCED DIFFUSION (OED); RAPID THERMAL DIFFUSION (RTO); SILICON BUFFER LAYERS;

BORON; DATA ACQUISITION; MOLECULAR BEAM EPITAXY; OXIDATION; POINT DEFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 13644282987     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1844606     Document Type: Article

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