Anisotropic dopant diffusion in Si under stress using both continuum and atomistic methods

Journal of Computational Electronics

Volumn 7, Issue 3, 2008, Pages 103-106

  Martin Bragado, I ^a   Avci, I ^a   El Sayed, K ^a   Koltyzhenkov, V ^a   Lyumkis, E ^a   Johnson, M D ^a  

^a SYNOPSYS INC   (United States)

Author keywords

Anisotropic; Diffusion; KMC; Stress; TCAD

Indexed keywords

ANISOTROPY; BORON; BORON COMPOUNDS; CONTINUUM MECHANICS; POINT DEFECTS; SILICON; TENSORS; TWO DIMENSIONAL;

ANISOTROPIC; DIFFUSION; KMC; STRESS; TCAD;

SEMICONDUCTOR DOPING;

EID: 50949128089     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-008-0248-9     Document Type: Article

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