Si-Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 101, Issue 4, 2007, Pages

  Xia, Guangrui ^a,c   Hoyt, Judy L ^a   Canonico, Michael ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN MATANO ANALYSIS; DISLOCATION DENSITY; EXTRACTED ACTIVATION ENERGY; PROCESS SIMULATOR;

BOLTZMANN EQUATION; GERMANIUM; HETEROJUNCTIONS; INTERDIFFUSION (SOLIDS); SILICON COMPOUNDS; THERMAL EFFECTS;

MOSFET DEVICES;

EID: 33847665091     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2430904     Document Type: Article

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