Sampling the diffusion paths of a neutral vacancy in silicon with quantum mechanical calculations

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 20, 2004, Pages

  El Mellouhi, Fedwa ^a   Mousseau, Normand ^a   Ordejón, Pablo ^b  

^a UNIVERSITÉ DE MONTRÉAL   (Canada)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DERIVATIVE;

ARTICLE; CALCULATION; CRYSTAL STRUCTURE; DIFFUSION; QUANTUM MECHANICS; STRUCTURE ANALYSIS;

EID: 42749098527     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.205202     Document Type: Article

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