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Volumn 154-155, Issue 1-3, 2008, Pages 85-89

Irradiation-induced defects in SiGe

Author keywords

Defects; DLTS; Irradiation; SiGe

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; OXYGEN VACANCIES; SI-GE ALLOYS;

EID: 56949090554     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.08.003     Document Type: Review
Times cited : (17)

References (23)
  • 1
    • 85166373131 scopus 로고    scopus 로고
    • see e.g. G.D. Watkins, in: Electronic Structure and Properties of Semiconductors. Edited by R.W. Cahn, P. Haasen and E. J. Kramer. Materials Science and Technology: A comprehensive treatment, Vol. 4, 1991, 105.
    • see e.g. G.D. Watkins, in: Electronic Structure and Properties of Semiconductors. Edited by R.W. Cahn, P. Haasen and E. J. Kramer. Materials Science and Technology: A comprehensive treatment, Vol. 4, 1991, 105.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.