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Journal of Non-Crystalline Solids

Volumn 357, Issue 8-9, 2011, Pages 1860-1865

Hafnium silicate dielectrics fabricated by RF magnetron sputtering

(4) Khomenkova, L a,b Portier, X a Marie, P a Gourbilleau, F a

a UNIVERSITÉ DE CAEN (France)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

Author keywords

ATR; Hafnium oxide; Hafnium silicate; High k dielectrics; RF magnetron sputtering; TEM; XRD

Indexed keywords

ATR; HAFNIUM SILICATE; HIGH-K DIELECTRICS; RF-MAGNETRON SPUTTERING; TEM; XRD;

AMORPHOUS SILICON; DIELECTRIC MATERIALS; HAFNIUM; HAFNIUM OXIDES; INFRARED SPECTROSCOPY; SILICATES; SILICON OXIDES; SPECTROSCOPIC ELLIPSOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

MAGNETRON SPUTTERING;

EID: 79955483776 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2010.12.048 Document Type: Conference Paper

Times cited : (9)

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