HfO2-based thin films deposited by RF magnetron sputtering

Materials Research Society Symposium Proceedings

Volumn 1160, Issue , 2009, Pages 69-74

  Khomenkova, L ^a   Dufour, C ^a   Coulon, P E ^b   Bonafos, C ^b   Gourbilleau, F ^a  

^a Direction de la Recherche Fondamentale   (France)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT ABSORPTION; MAGNETRON SPUTTERING; MICROELECTRONICS;

AMORPHOUS STRUCTURES; ANNEALING TREATMENTS; CRYSTALLINE TRANSFORMATION; CRYSTALLIZATION TEMPERATURE; DEPOSITION PARAMETERS; MICROELECTRONIC APPLICATIONS; POST DEPOSITION ANNEALING; RF-MAGNETRON SPUTTERING;

HAFNIUM OXIDES;

EID: 77649144545     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1160-h05-08     Document Type: Conference Paper

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