Thermal stability of high-k Si-rich HfO2 layers grown by RF magnetron sputtering

Nanotechnology

Volumn 21, Issue 28, 2010, Pages

  Khomenkova, L ^a   Portier, X ^a   Cardin, J ^a   Gourbilleau, F ^a  

^a UNIVERSITÉ DE CAEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ANNEALING TREATMENTS; ATTENUATED TOTAL REFLECTION INFRARED SPECTROSCOPY; CHEMICAL COMPOSITIONS; MATRIX; RF-MAGNETRON SPUTTERING; RICH STRUCTURE; STRUCTURE STABILITY; SURFACE-DIRECTED SPINODAL DECOMPOSITION; TETRAGONAL STRUCTURE; THERMAL STABILITY;

ANNEALING; HAFNIUM COMPOUNDS; INFRARED SPECTROSCOPY; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; PHASE SEPARATION; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SILICON OXIDES; SPECTROSCOPIC ELLIPSOMETRY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SPINODAL DECOMPOSITION;

EID: 77954150854     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/28/285707     Document Type: Article

References (37)

1. Wilk G D, Wallace R M and Anthony J M 2000 J. Appl. Phys. 87 484
2. Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
3. Goncharova L V, Dalponte M, Starodub D G, Gustafsson T, Garfunkel E, Lysaght P S, Foran B, Barnett J and Bersuker G 2006 Appl. Phys. Lett. 89 044108
4. Rignanese G-M 2005 J. Phys.: Condens. Matter 17 R357
5. Fischer D and Kersch A 2008 Appl. Phys. Lett. 92 012908
6. Lee Ch-K, Lee H-S, Hwang Ch S and Han S 2008 Phys. Rev. B 78 012102
7. Cockayne A 2008 J. Appl. Phys. 103 084103
8. Tsoutsou D et al 2009 J. Appl. Phys. 106 024107
9. Majumder P, Jursich G and Takoudis C 2009 J. Appl. Phys. 105 104106
10. Tomida K, Kita K and Toriumi A 2006 Appl. Phys. Lett. 89 142902
11. 2-based thin films deposited by magnetron sputtering Materials and Physics for Nonvolatile Memories (Mater. Res. Soc. Symp. Proc. vol 1160) ed Y Fujisaki, R Waser, T Li and C Bonafos (Warrendale, PA: Material Research Society) pp69-72
12. Khomenkova L, Dufour C, Coulon P-E, Bonafos C and Gourbilleau F 2010 Nanotechnology 21 095704
13. Li W, Jia R, Chen C, Liu M, Zhu C and Long S 2009 ECS Trans. 18 1071
14. Perego M, Seguini G, Wiemer C, Fanciulli M, Coulon P-E and Bonafos C 2010 Nanotechnology 21 055606
15. Lucovsky G and Rayner G B 2000 Appl. Phys. Lett. 77 2912
16. Liu J, Wu X, Lennard W N and Landheer D 2009 Phys. Rev. B 80 041403
17. Liu J, Wu X, Lennard W N and Landheer D 2009 ECS Trans. 25 163
18. Cho M-H, Kim C Y, Moon K, Chung K B, Yim C J, Ko D-H, Sohn H C and Jeon H 2008 J. Chem. Phys. 129 034705
19. http://www.horiba.com/scientific/products/ellipsometers/software/
20. Charvet S, Madelon R, Gourbilleau F and Rizk R 1999 J. Appl. Phys. 85 4032
21. Buiu O, Davey W, Lu Y, Mitrovic I Z and Hall S 2008 Thin Solid Films 517 453
22. Bruggeman D A G 1935 Ann. Phys. 416 636
23. Forouhi A R and Bloomer I 1986 Phys. Rev. B 34 7018
24. Jelisson G E Jr and Modine F A 1996 Appl. Phys. Lett. 69 371
25. Neumayer D A and Cartier E 2001 J. Appl. Phys. 90 1801
26. Mitrovic I Z, Buiu O, Hall S, Bungey C, Wagner T, Davey W and Lu Y 2007 Microelectron. Reliab. 47 645
27. Tan T, Liu Zh, Lu H, Liu W and Tian H 2010 Opt. Mater. 32 432
28. Kirk C T 1988 Phys. Rev. B 38 1255
29. Lange P 1989 J. Appl. Phys. 66 201
30. Ono H, Ikarashi T, Ando K and Kitano T 1998 J. Appl. Phys. 84 6064
31. Olsen J E and Shimura F 1989 J. Appl. Phys. 66 1353
32. Maunoury C et al 2007 J. Appl. Phys. 101 034112
33. Frank M M, Sayan S, Dörmann S, Emge T J, Wielunski L S, Garfunkel E and Chabal Y J 2004 Mater. Sci. Eng. B 109 6
34. Nguyen N V, Davydov A V, Chandler-Horowitz D and Frank M F 2005 Appl. Phys. Lett. 87 192903
35. Tang J, Zhang F, Zoogman P, Fabbri J, Chan S-W, Zhu Y, Brus L E and Steigerwald L 2005 Adv. Funct. Mater. 15 1595
36. Ho M-Y et al 2003 J. Appl. Phys. 93 1477
37. Monaghan S, Greer J C and Elliott S D 2005 J. Appl. Phys. 97 114911