Compositional, structural and electronic characteristics of HfO2 and HfSiO dielectrics prepared by radio frequency magnetron sputtering

Vacuum

Volumn 83, Issue 5, 2009, Pages 902-905

  Feng, Li ping ^a   Liu, Zheng tang ^a   Shen, Ya ming ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Gate dielectric; HfO2; HfSiO; Radio frequency magnetron sputtering

Indexed keywords

ANNEALING; ATOMIC SPECTROSCOPY; CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTROMAGNETIC WAVES; ELECTRONIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MAGNETRONS; NANOCRYSTALLINE ALLOYS; PHOTOELECTRON SPECTROSCOPY; RADIO; RADIO WAVES; REAL TIME SYSTEMS; SILICON; SPACE OPTICS; X RAY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOM RATIOS; CHEMICAL COMPOSITIONS; DIELECTRIC CONSTANTS; ELECTRONIC CHARACTERISTICS; FIXED CHARGE DENSITIES; GATE BIASES; GRAZING INCIDENCES; HFO2; HFSIO; RADIO FREQUENCIES; RADIO FREQUENCY MAGNETRON SPUTTERING; SI SUBSTRATES; X-RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

FILM PREPARATION;

EID: 56949088945     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2008.08.004     Document Type: Article

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