Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application

Materials Science and Engineering: B

Volumn 109, Issue 1-3, 2004, Pages 89-93

  Pereira, L ^a   Marques, A ^a   Aguas H ^a   Nedev, N ^a   Georgiev, S ^a   Fortunato, E ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

Gate dielectric; Hafnium oxide; Rf sputtering

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC INSULATING MATERIALS; ELLIPSOMETRY; METAL INSULATOR BOUNDARIES; PERMITTIVITY; SEMICONDUCTOR METAL BOUNDARIES; SPUTTERING; STOICHIOMETRY;

GATE DIELECTRICS; HAFNIUM OXIDE; RADIO FREQUENCY SPUTTERING; SPECTROSCOPIC ELLIPSOMETRY (SE);

HAFNIUM COMPOUNDS;

EID: 2342450573     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.053     Document Type: Conference Paper

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