High-performance poly-silicon TFTs with high-k Y2O3 gate dielectrics

Semiconductor Science and Technology

Volumn 26, Issue 7, 2011, Pages

  Pan, Tung Ming ^a   Chang, Chih Jen ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT RATIOS; EFFECTIVE CARRIER MOBILITY; ELECTRICAL CHARACTERISTIC; LOW-TEMPERATURE POLY-SI; POLY-SI; POLY-SI TFTS; POLY-SI THIN-FILM TRANSISTORS; SMOOTH SURFACE; STATE DENSITIES; SUBTHRESHOLD SLOPE; THERMAL-ANNEALING;

ANNEALING; CARRIER MOBILITY; DIELECTRIC MATERIALS; GATES (TRANSISTOR); POLYSILICON; THIN FILM TRANSISTORS;

GATE DIELECTRICS;

EID: 79953837368     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/7/075004     Document Type: Article

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