SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 96, Issue 11, 2010, Pages

High-performance CF4 plasma treated polycrystalline silicon thin-film transistors using a high-k Tb2 O3 gate dielectric

(2) Pan, Tung Ming a Li, Zhi Hong a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT RATIOS; EFFECTIVE CARRIER MOBILITY; ELECTRICAL RELIABILITY; FLUORINE ATOMS; LOW THRESHOLD VOLTAGE; PLASMA TREATMENT; POLY-SI; POLY-SI FILMS; POLY-SI TFTS; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR; SUBTHRESHOLD SWING; TRAP STATE;

CARRIER MOBILITY; FLUORINE; GATE DIELECTRICS; GATES (TRANSISTOR); PLASMA APPLICATIONS; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; TERBIUM ALLOYS;

THIN FILM TRANSISTORS;

EID: 77949688059 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3357428 Document Type: Article

Times cited : (8)

References (24)

1
- 0012258197
- 1071-0922,. 10.1889/1.1828784
- Y. Oana, J. Soc. Inf. Disp. 1071-0922 9, 169 (2001). 10.1889/1.1828784
- (2001) J. Soc. Inf. Disp. , vol.9 , pp. 169
- Oana, Y.¹

2
- 0034799655
- 0743-1562.
- K. Yoneda, R. Yokoyama, and T. Yamada, Dig. Tech. Pap.-Symp. VLSI Technol. 0743-1562 2001, 85.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2001 , pp. 85
- Yoneda, K.¹ Yokoyama, R.² Yamada, T.³

3
- 0020089602
- 0021-8979,. 10.1063/1.330583
- J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, and M. Rider, J. Appl. Phys. 0021-8979 53, 1193 (1982). 10.1063/1.330583
- (1982) J. Appl. Phys. , vol.53 , pp. 1193
- Levinson, J.¹ Shepherd, F.R.² Scanlon, P.J.³ Westwood, W.D.⁴ Este, G.⁵ Rider, M.⁶

4
- 0024739568
- 0018-9383,. 10.1109/16.34270
- R. E. Proano, R. S. Misage, and D. G. Ast, IEEE Trans. Electron Devices 0018-9383 36, 1915 (1989). 10.1109/16.34270
- (1989) IEEE Trans. Electron Devices , vol.36 , pp. 1915
- Proano, R.E.¹ Misage, R.S.² Ast, D.G.³

5
- 0027591006
- 0018-9383,. 10.1109/16.210195
- M. Hack, A. G. Lewis, and I. W. Wu, IEEE Trans. Electron Devices 0018-9383 40, 890 (1993). 10.1109/16.210195
- (1993) IEEE Trans. Electron Devices , vol.40 , pp. 890
- Hack, M.¹ Lewis, A.G.² Wu, I.W.³

6
- 0026140319
- 0741-3106,. 10.1109/55.75757
- I. W. Wu, W. B. Jackson, T. Y. Huang, A. G. Lewis, and A. C. Chiang, IEEE Electron Device Lett. 0741-3106 12, 181 (1991). 10.1109/55.75757
- (1991) IEEE Electron Device Lett. , vol.12 , pp. 181
- Wu, I.W.¹ Jackson, W.B.² Huang, T.Y.³ Lewis, A.G.⁴ Chiang, A.C.⁵

7
- 84948610182
- 0018-9383,. 10.1109/16.387244
- S. Maegawa, T. Ipposhi, S. Maeda, H. Nishimura, T. Ichiki, M. Ashida, O. Tanina, Y. Inoue, T. Nishimura, and N. Tsubouchi, IEEE Trans. Electron Devices 0018-9383 42, 1106 (1995). 10.1109/16.387244
- (1995) IEEE Trans. Electron Devices , vol.42 , pp. 1106
- Maegawa, S.¹ Ipposhi, T.² Maeda, S.³ Nishimura, H.⁴ Ichiki, T.⁵ Ashida, M.⁶ Tanina, O.⁷ Inoue, Y.⁸ Nishimura, T.⁹ Tsubouchi, N.¹⁰

8
- 20544455646
- 0741-3106,. 10.1109/LED.2005.848095
- S. -D. Wang, W. H. Lo, T. Y. Chang, and T. F. Lei, IEEE Electron Device Lett. 0741-3106 26, 372 (2005). 10.1109/LED.2005.848095
- (2005) IEEE Electron Device Lett. , vol.26 , pp. 372
- Wang, S.-D.¹ Lo, W.H.² Chang, T.Y.³ Lei, T.F.⁴

9
- 0032292720
- 0741-3106,. 10.1109/55.735760
- Z. Jin, H. S. Kwok, and M. Wong, IEEE Electron Device Lett. 0741-3106 19, 502 (1998). 10.1109/55.735760
- (1998) IEEE Electron Device Lett. , vol.19 , pp. 502
- Jin, Z.¹ Kwok, H.S.² Wong, M.³

10
- 33646263586
- 0741-3106,. 10.1109/LED.2006.872832
- C. -P. Lin, B. Y. Tsui, M. J. Yang, R. H. Huang, and C. H. Chien, IEEE Electron Device Lett. 0741-3106 27, 360 (2006). 10.1109/LED.2006.872832
- (2006) IEEE Electron Device Lett. , vol.27 , pp. 360
- Lin, C.-P.¹ Tsui, B.Y.² Yang, M.J.³ Huang, R.H.⁴ Chien, C.H.⁵

11
- 37549052104
- 0741-3106,. 10.1109/LED.2007.911614
- C. W. Chang, C. K. Deng, J. J. Huang, H. R. Chang, and T. F. Lei, IEEE Electron Device Lett. 0741-3106 29, 96 (2008). 10.1109/LED.2007.911614
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 96
- Chang, C.W.¹ Deng, C.K.² Huang, J.J.³ Chang, H.R.⁴ Lei, T.F.⁵

12
- 20544463241
- 0741-3106,. 10.1109/LED.2005.848622
- B. F. Hung, K. C. Chiang, C. C. Huang, A. Chin, and S. P. McAlister, IEEE Electron Device Lett. 0741-3106 26, 384 (2005). 10.1109/LED.2005.848622
- (2005) IEEE Electron Device Lett. , vol.26 , pp. 384
- Hung, B.F.¹ Chiang, K.C.² Huang, C.C.³ Chin, A.⁴ McAlister, S.P.⁵

13
- 58149508197
- 0741-3106,. 10.1109/LED.2008.2008449
- T. M. Pan, C. L. Chan, and T. W. Wu, IEEE Electron Device Lett. 0741-3106 30, 39 (2009). 10.1109/LED.2008.2008449
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 39
- Pan, T.M.¹ Chan, C.L.² Wu, T.W.³

14
- 0038005494
- 0021-4922,. 10.1143/JJAP.42.247
- S. Kitai, O. Maida, T. Kanashima, and M. Okuyama, Jpn. J. Appl. Phys., Part 1 0021-4922 42, 247 (2003). 10.1143/JJAP.42.247
- (2003) Jpn. J. Appl. Phys., Part 1 , vol.42 , pp. 247
- Kitai, S.¹ Maida, O.² Kanashima, T.³ Okuyama, M.⁴

15
- 0000667363
- 0003-6951,. 10.1063/1.126199
- L. Kim, J. Kim, D. Jung, and Y. Roh, Appl. Phys. Lett. 0003-6951 76, 1881 (2000). 10.1063/1.126199
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1881
- Kim, L.¹ Kim, J.² Jung, D.³ Roh, Y.⁴

16
- 18644361821
- 0021-8979,. 10.1063/1.1498964
- J. C. Wang, S. H. Chiao, C. L. Lee, T. F. Lei, Y. M. Lin, M. F. Wang, S. C. Chen, C. H. Yu, and M. S. Liang, J. Appl. Phys. 0021-8979 92, 3936 (2002). 10.1063/1.1498964
- (2002) J. Appl. Phys. , vol.92 , pp. 3936
- Wang, J.C.¹ Chiao, S.H.² Lee, C.L.³ Lei, T.F.⁴ Lin, Y.M.⁵ Wang, M.F.⁶ Chen, S.C.⁷ Yu, C.H.⁸ Liang, M.S.⁹

17
- 0000082343
- 0021-8979,. 10.1063/1.368384
- N. Bhat and K. C. Saraswat, J. Appl. Phys. 0021-8979 84, 2722 (1998). 10.1063/1.368384
- (1998) J. Appl. Phys. , vol.84 , pp. 2722
- Bhat, N.¹ Saraswat, K.C.²

18
- 0026835667
- 0018-9383,. 10.1109/16.123484
- C. A. Dimitriadis, P. A. Coxon, L. Dozsa, L. Papadimitriou, and N. Economou, IEEE Trans. Electron Devices 0018-9383 39, 598 (1992). 10.1109/16.123484
- (1992) IEEE Trans. Electron Devices , vol.39 , pp. 598
- Dimitriadis, C.A.¹ Coxon, P.A.² Dozsa, L.³ Papadimitriou, L.⁴ Economou, N.⁵

19
- 25644456675
- 0013-4651,. 10.1149/1.1955166
- S. -D. Wang, W. H. Lo, and T. F. Lei, J. Electrochem. Soc. 0013-4651 152, G703 (2005). 10.1149/1.1955166
- (2005) J. Electrochem. Soc. , vol.152 , pp. 703
- Wang, S.-D.¹ Lo, W.H.² Lei, T.F.³

20
- 39549087202
- 0741-3106,. 10.1109/LED.2007.914091
- M. W. Ma, C. Y. Chen, C. J. Su, W. C. Wu, Y. H. Wu, K. H. Kao, T. S. Chao, and T. F. Lei, IEEE Electron Device Lett. 0741-3106 29, 171 (2008). 10.1109/LED.2007.914091
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 171
- Ma, M.W.¹ Chen, C.Y.² Su, C.J.³ Wu, W.C.⁴ Wu, Y.H.⁵ Kao, K.H.⁶ Chao, T.S.⁷ Lei, T.F.⁸

21
- 34347363132
- 0013-4651,. 10.1149/1.2742810
- C. Y. Chen, J. W. Lee, M. W. Ma, W. C. Chen, H. Y. Lee, K. L. Yeh, S. D. Wong, and T. F. Lei, J. Electrochem. Soc. 0013-4651 154, H704 (2007). 10.1149/1.2742810
- (2007) J. Electrochem. Soc. , vol.154 , pp. 704
- Chen, C.Y.¹ Lee, J.W.² Ma, M.W.³ Chen, W.C.⁴ Lee, H.Y.⁵ Yeh, K.L.⁶ Wong, S.D.⁷ Lei, T.F.⁸

22
- 43749100691
- 0018-9383,. 10.1109/TED.2008.919710
- M. W. Ma, C. Y. Chen, W. C. Wu, C. J. Su, K. H. Kao, T. S. Chao, and T. F. Lei, IEEE Trans. Electron Devices 0018-9383 55, 1153 (2008). 10.1109/TED.2008.919710
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 1153
- Ma, M.W.¹ Chen, C.Y.² Wu, W.C.³ Su, C.J.⁴ Kao, K.H.⁵ Chao, T.S.⁶ Lei, T.F.⁷

23
- 43049126192
- 0021-8979,. 10.1063/1.2907768
- S. Zhu and A. Nakajima, J. Appl. Phys. 0021-8979 103, 084512 (2008). 10.1063/1.2907768
- (2008) J. Appl. Phys. , vol.103 , pp. 084512
- Zhu, S.¹ Nakajima, A.²

24
- 37549019302
- 0013-4651,. 10.1149/1.2816281
- C. W. Chang, P. W. Huang, C. K. Deng, J. J. Huang, H. R. Chang, and T. F. Lei, J. Electrochem. Soc. 0013-4651 155, J50 (2008). 10.1149/1.2816281
- (2008) J. Electrochem. Soc. , vol.155 , pp. 50
- Chang, C.W.¹ Huang, P.W.² Deng, C.K.³ Huang, J.J.⁴ Chang, H.R.⁵ Lei, T.F.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.