-
1
-
-
0030658190
-
High performance gate-all-around TFT(GAT) for high-density, low-voltage-operation, and low-power SRAMs
-
S. Miyamoto et al., “High performance gate-all-around TFT(GAT) for high-density, low-voltage-operation, and low-power SRAMs,” in Proc. 1997 Symp. VLSI Technology, Systems, and Applications, pp. 128-132.
-
Proc. 1997 Symp. VLSI Technology, Systems, and Applications
, pp. 128-132
-
-
Miyamoto, S.1
-
2
-
-
0032663029
-
Metal node contact TFT SRAM cell for high-speed, low-voltage application
-
Apr.
-
K. S. Son, S. W. Kwon, Y. J. Lee, and D. M. Kim, “Metal node contact TFT SRAM cell for high-speed, low-voltage application,” IEEE Trans. Electron Devices, vol. 46, pp. 805-806, Apr. 1999.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, pp. 805-806
-
-
Son, K.S.1
Kwon, S.W.2
Lee, Y.J.3
Kim, D.M.4
-
3
-
-
0032664319
-
An asymmetric memory cell using a C-TFT for single-bit-line SRAM's
-
May
-
H. Kuriyama et al., “An asymmetric memory cell using a C-TFT for single-bit-line SRAM's,” IEEE Trans. Electron Devices, vol. 46, pp. 927-931, May 1999.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, pp. 927-931
-
-
Kuriyama, H.1
-
4
-
-
36449009173
-
Pd induced lateral crystallization of amorphous Si thin film
-
Mar.
-
S. Lee, Y. Jeon, and S. Joo, “Pd induced lateral crystallization of amorphous Si thin film,” Appl. Phys. Lett., vol. 66, pp. 1671-1673, Mar. 1995.
-
(1995)
Appl. Phys. Lett.
, vol.66
, pp. 1671-1673
-
-
Lee, S.1
Jeon, Y.2
Joo, S.3
-
5
-
-
0030128485
-
Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization
-
Apr.
-
S. Lee and S. Joo, “Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization,” IEEE Electron Device Lett., vol. 17, pp. 160-162, Apr. 1996.
-
(1996)
IEEE Electron Device Lett.
, vol.17
, pp. 160-162
-
-
Lee, S.1
Joo, S.2
-
6
-
-
0033343175
-
SOI formation from amorphous Silicon by metal-induced-lateral-crystallization (MILC) and subsequent high temperature annealing
-
S. Jagar et al., “SOI formation from amorphous Silicon by metal-induced-lateral-crystallization (MILC) and subsequent high temperature annealing,” in Proc. Int. SOI Conf., 1999, pp. 112-113.
-
(1999)
Proc. Int. SOI Conf.
, pp. 112-113
-
-
Jagar, S.1
-
7
-
-
0033342070
-
Single grain thin-film-transistor(TFT) with SOI CMOS performance formed by metal-induced-lateral-crystallization
-
S. Jagar et al., “Single grain thin-film-transistor(TFT) with SOI CMOS performance formed by metal-induced-lateral-crystallization,” in IEDM Tech. Dig., 1999, pp. 293-296.
-
(1999)
IEDM Tech. Dig.
, pp. 293-296
-
-
Jagar, S.1
-
8
-
-
0032163137
-
High-performance germanium-seeded laterally crystallized TFTs for vertical device integration
-
Sept.
-
V. Subramanian and K. Saraswat, “High-performance germanium-seeded laterally crystallized TFTs for vertical device integration,” IEEE Trans. Electron Devices, vol. 45, pp. 1934-1939, Sept. 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 1934-1939
-
-
Subramanian, V.1
Saraswat, K.2
-
9
-
-
0033164586
-
Low-leakage germanium-seeded laterally crystallized single-grain 100-nm TFTs for vertical integration applications
-
July
-
V. Subramanian et al., “Low-leakage germanium-seeded laterally crystallized single-grain 100-nm TFTs for vertical integration applications,” IEEE Electron Device Lett., vol. 20, pp. 341-343, July 1999.
-
(1999)
IEEE Electron Device Lett.
, vol.20
, pp. 341-343
-
-
Subramanian, V.1
|