CF4 -plasma-induced fluorine passivation effects on poly-Si TFTs with high- κ Pr2O3 gate dielectric

Journal of the Electrochemical Society

Volumn 155, Issue 2, 2008, Pages

  Chang, Chia Wen ^a   Huang, Po Wei ^a   Deng, Chih Kang ^a   Huang, Jiun Jia ^a   Chang, Hong Ren ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; FLUORINE; HOT CARRIERS; LEAKAGE CURRENTS; POLYSILICON; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

GATE CAPACITANCE DENSITY; PLASMA TREATMENT;

GATE DIELECTRICS;

EID: 37549019302     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2816281     Document Type: Article

References (26)

1. T. Serikawa, S. Shirai, A. Okamoto, and S. Suyama, IEEE Trans. Electron Devices, 36, 1929 (1989).
2. Y. Oana, J. Soc. Inf. Disp., 9, 169 (2001).
3. B. D. Choi, H. S. Jang, O. K. Kwon, H. G. Kim, and M. J. Soh, IEEE Trans. Consum. Electron., 21, 100 (2000).
4. T. Aoyama, G. Kawachi, N. Konishi, T. Suzuki, Y. Okajima, and K. Miyata, J. Electrochem. Soc., 136, 1169 (1989).
5. A. Takami, A. Ishida, J. Tsutsumi, T. Nishibe, and N. Ibaraki, in Proceedings of the International Workshop on AM-LCD, p. 45 (2000).
6. C. K. Yang, C. L. Lee, and T. F. Lei, IEEE Electron Device Lett., 16, 228 (1995).
7. Z. Jin, H. S. Kwok, and M. Wong, IEEE Electron Device Lett., 19, 502 (1998).
8. M. Y. Um, S.-K. Lee, and H. J. Kim, in Proceedings of the International Workshop on AM-LCD, p. 45 (1998).
9. Y. Morimoto, Y. Jinno, K. Hirai, H. Ogata, T. Yamada, and K. Yoneda, J. Electrochem. Soc., 144, 2495 (1997).
10. I. W. Wu, W. B. Jackson, T. Y. Huang, A. G. Lewis, and A. Ciang, IEEE Electron Device Lett., 12, 181 (1991).
11. I. W. Wu, W. B. Jackson, T. Y. Huang, A. G. Lewis, and A. Ciang, IEEE Electron Device Lett., 11, 167 (1990).
12. H. N. Chern, C. L. Lee, and T. F. Lei, IEEE Trans. Electron Devices, 41, 698 (1994).
13. C. K. Yang, T. F. Lei, and C. L. Lee, J. Electrochem. Soc., 143, 3302 (1996).
14. H. J. Osten, J. P. Liu, P. Gaworzewski, E. Bugiel, and P. Zaumseil, in Tech. Dig. - Int. Electron Devices Meet., 2000, 653.
15. H. J. Mussig, H. J. Osten, E. Bugiel, J. Dabrowski, A. Fissel, T. Guminskaya, K. Ignatovich, J. P. Liu, P. Zaumseil, and V. Zavodinsky, IRW Final Report, IEEE, p. 1 (2001).
16. C. W. Chang, C. K. Deng, H. R. Chang, and T. F. Lei, IEEE Electron Device Lett., Accepted.
17. C. H. Tseng, T. K. Chang, F. T. Chu, J. M. Shieh, B. T. Dai, H. C. Cheng, and A. Chin, IEEE Electron Device Lett., 6, 333 (2002).
18. K. M. Chang, W. C. Yang, and C. P. Tsai, IEEE Electron Device Lett., 24, 512 (2003).
19. B. H. Lee, Y. Jeon, K. Zawadzki, W. J. Qi, and J. Lee, Appl. Phys. Lett., 74, 3143 (1999).
20. J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, and M. Rider, J. Appl. Phys., 53, 1193 (1982).
21. R. E. Proano, R. S. Misage, and D. G. Ast, IEEE Trans. Electron Devices, 36, 1915 (1989).
22. C. A. Dimitriadis, P. A. Coxon, L. Dozsa, L. Papadimitriou, and N. Economou, IEEE Trans. Electron Devices, 39, 598 (1992).
23. L. S. Wang, P. C. Wei, T. S. Chang, Y. P. Chang, C. L. Yen, W. C. Yang, and H. Kuan, in Proceedings of International Symposium on Plasma Process-Induced Damage, p. 29 (2001).
24. K. Takechi, H. Uchida, and S. Kaneko, in Mater. Res. Soc. Symp. Proc., 1992. 955.
25. J. Y. Lee, C. H. Han, and C. K. Kim, in Tech. Dig. - Int. Electron Devices Meet., 1994. 523.
26. C. L. Fan and M. C. Chen, Electrochem. Solid-State Lett., 5, 75 (2002).