High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric

IEEE Electron Device Letters

Volumn 26, Issue 6, 2005, Pages 384-386

  Hung, B F ^a   Chiang, K C ^a   Huang, C C ^a   Chin, Albert ^b   McAlister, S P ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

High ; LaAlO3; Thin film transistors (TFTs); Threshold voltage

Indexed keywords

CAPACITANCE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; GATES (TRANSISTOR); LANTHANUM COMPOUNDS; PERMITTIVITY; POLYSILICON; SILICON WAFERS; THRESHOLD VOLTAGE;

GATE DIELECTRIC; POLYSILICON THIN FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 20544463241     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.848622     Document Type: Article

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