CF4 plasma treatment for fabricating high-performance and reliable solid-phase-crystallized poly-Si TFTs

Journal of the Electrochemical Society

Volumn 152, Issue 9, 2005, Pages

  Wang, Shen De ^a   Lo, Wei Hsiang ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; FLUORINE; POLYSILICON; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

FLUORINE ATOMS; PLASMA TREATMENTS; SOLID-PHASE-CRYSTALLIZED (SPC);

PLASMA DIAGNOSTICS;

EID: 25644456675     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1955166     Document Type: Article

References (22)

1. I. W. Wu, Tech. Dig. AM-LCD, 1995, 7.
2. Y. Oano, J. Soc. Inf. Disp., 9, 169 (2001).
3. J. Hanari, J. Soc. Inf. Disp., 10, 53 (2002).
4. I. W. Wu, W. B. Jackson, T. Y. Huang, A. G. Lewis, and A. Ciang, IEEE Electron Device Lett., 12, 181 (1991).
5. G. K. Guist and T. W. Sigmon, IEEE Trans. Electron Devices, 45, 925 (1998).
6. E. Korin, R. Reif, and B. Mikic, Thin Solid Films, 167, 101 (1988).
7. C. F. Yeh, T. J. Chen, C. Liu, J. T. Gudmundsson, and M. A. Lieberman, IEEE Electron Device Lett., 20, 223 (1999).
8. H. C. Cheng, F. S. Wang, and C. Y. Huang, IEEE Trans. Electron Devices, 44, 64 (1997).
9. I. W. Wu, W. B. Jackson, T. Y. Huang, A. G. Lewis, and A. Ciang, IEEE Electron Device Lett., 12, 181 (1991).
10. S. Maegawa, T. Ipposhi, S. Maeda, H. Nishimura, T. Ichiki, M. Ashida, O. Tanina, Y. Inoue, T. Nishimura, and N. Tsubouchi, IEEE Trans. Electron Devices, 42, 1106 (1995).
11. H. N. Chen, C. L. Lee, and T. F. Lei, IEEE Trans. Electron Devices, 41, 698 (1994).
12. J. W. Park, B. T. Ahn, and K. Lee, Jpn. J. Appl. Phys., Part 1, 34, 1436 (1995).
13. C. H. Fan and M. C. Chen, Electrochem. Solid-State Lett., 5, G75 (2002).
14. C. H. Kim, J. H. Jeon, J. S. Yoo, K. C. Park, and M. K. Han, Jpn. J. Appl. Phys., Part 1, 67, 2247 (1999).
15. C. H. Kim, S. H. Jung, J. S. Yoo, and M. K. Han, IEEE Electron Device Lett., 22, 396 (2001).
16. J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, and M. Rider, J. Appl. Phys., 53, 1193 (1982).
17. R. E. Proano, R. S. Misage, and D. G. Ast, IEEE Trans. Electron Devices, 36, 1915 (1989).
18. C. A. Dimitriadis, P. A. Coxon, L. Dozsa, L. Papadimitriou, and N. Economou, IEEE Trans. Electron Devices, 39, 598 (1992).
19. J. Y. Seto, J. Appl. Phys., 46, 5247 (1975).
20. S. Inoue and H. Ohshima, Tech. Dig. - Int. Electron Devices Meet., 1996, 781.
21. M. Kimura, S. Inoue, T. Shimoda, S. W.-B. Tam, O. K. B. Lui, P. Migliorato, and R. Nozawa, J. Appl. Phys., 91, 3855 (2002).
22. Y. Mitani, H. Satake, Y. Nakasaki, and A. Toriumi, IEEE Trans. Electron Devices, 50, 2221 (2003).