Sensing sensibility of surface micromachined suspended gate polysilicon thin film transistors

Sensors and Actuators, B: Chemical

Volumn 118, Issue 1-2, 2006, Pages 243-248

  Mahfoz Kotb, H ^a   Salaun A C ^a   Bendriaa, F ^a   Le Bihan, F ^a   Mohammed Brahim, T ^a   Morante, J R ^b  

^a CNRS   (France)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

Gas sensor; Surface micromachining; Suspended gate thin film transistor

Indexed keywords

CHEMICAL SENSORS; ELECTRIC CHARGE; GATES (TRANSISTOR); MATHEMATICAL MODELS; MICROMACHINING; POLYCRYSTALLINE MATERIALS;

ELECTRICAL CHARACTERISTICS; POLYSILICON THIN FILMS; SURFACE MICROMACHINING; SUSPENDED GATE THIN FILM TRANSISTOR (SGTFT);

THIN FILM TRANSISTORS;

EID: 33747844276     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2006.04.029     Document Type: Article

References (11)

1. Janata J. Sens. Actuators 4 (1983) 255-265
2. Flietner B., Doll T., Lechner J., Leu M., and Eisele I. Sens. Actuators B 18-19 (1994) 632
3. Burgmair M., Frerichs H.P., Zimmer M., Lehmann M., and Eisele I. Sens. Actuators B 95 (2003) 183
4. Mahfoz-Kotb H., Salaun A.C., Mohammed-Brahim T., and Bonnaud O. IEEE Electron. Dev. Lett. 24 (2003) 165-167
5. Cirera A., Cabot A., Cornet A., and Morante J.R. Sens. Actuators B 78 (2001) 151-160
6. Zhang W., de Vasconcelos E.A., Uchida H., Katsube T., Nakatsubo T., and Nishioka Y. Sens. Actuators B 65 (2000) 154-156
7. Talazac L., Brunet J., Battut V., Blanc J.P., Pauly A., Pgermain J., Pellier S., and Soulier C. Sens. Actuators B 76 (2001) 258-264
8. Karthigeyan A., Gupta R.P., Scharnagl K., Burgmair M., Sharma S.K., and Eisele I. Sens. Actuators B 85 (2002) 145-153
9. Gergintschew Z., Kornetzky P., and Schipanski D. Sens. Actuators B 35-36 (1996) 285-289
10. Pancheri L., Oton C.J., Gaburro Z., Soncini G., and Pavesi L. Sens. Actuators B 89 (2003) 237-239
11. T. Mohammed-Brahim, A.-C. Salaün, F. Le Bihan, H. Kotb, O. Bonnaud, F. Bendriaa, French Patent no. 04.07583, 7th July 2004.