Characteristics of Pr2 O3 gate dielectric thin-film transistors fabricated on fluorine-ion-implanted polysilicon films

Electrochemical and Solid-State Letters

Volumn 10, Issue 11, 2007, Pages 143-145

  Chang, Chia Wen ^a   Deng, Chih Kang ^a   Huang, Jiun Jia ^a   Chang, Hong Ren ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTALLIZATION; DRAIN CURRENT; FLUORINE; GATE DIELECTRICS; HOT CARRIERS; ION IMPLANTATION; LEAKAGE CURRENTS; POLYSILICON; PRASEODYMIUM COMPOUNDS;

HOT-CARRIER STRESS; POLYSILICON FILMS; TRAP STATES;

THIN FILM TRANSISTORS;

EID: 34548478074     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2771081     Document Type: Article

References (18)

1. K. Yoneda, R. Yokoyama, and T. Yamada, in Symposium on VLSI Circuits, Digest Technical Papers, IEEE, p. 85 (2001).
2. T. Serikawa, S. Shirai, A. Okamoto, and S. Suyama, IEEE Trans. Electron Devices, 36, 1929 (1989).
3. B. D. Choi, H. S. Jang, O. K. Kwon, H. G. Kim, and M. J. Soh, IEEE Trans. Consum. Electron., 21, 100 (2000).
4. A. Takami, A. Ishida, J. Tsutsumi, T. Nishibe, and N. Ibaraki, Technical Digest of the International Workshop on Active-Matrix Liquid-Crystal Display, p. 45 (2000).
5. C. K. Yang, C. L. Lee, and T. F. Lei, IEEE Electron Device Lett., 16, 228 (1995).
6. Z. Jin, H. S. Kwok, and M. Wong, IEEE Electron Device Lett., 19, 502 (1998).
7. M. Y. Um, S. K. Lee, and H. J. Kim, in Technical Digest of the International Workshop on Active-Matrix Liquid-Crystal Display, p. 45 (1998).
8. H. J. Osten, J. P. Liu, P. Gaworzewski, E. Bugiel, and P. Zaumseil, Tech. Dig. - Int. Electron Devices Meet., 2000, 653.
9. U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland, G. Tzschöckel, H. J. Osten, A. Fissel, European Solid State Device Research Conference, p. 407 (2002).
10. C. W. Chang, C. K. Deng, H. R. Chang, and T. F. Lei, IEEE Electron Device Lett., Submitted.
11. Y. Morimoto, Y. Jinno, K. Hirai, H. Ogata, T. Yamada, and K. Yoneda, J. Electrochem. Soc., 144, 2495 (1997).
12. I. W. Wu, A. G. Lewis, T. Y. Huang, and A. Chiang, IEEE Electron Device Lett., 12, 181 (1991).
13. M. Hack, A. G. Lewis, and I.-W. Wu, IEEE Trans. Electron Devices, 40, 890 (1993).
14. H. N. Chern, C. L. Lee, and T. F. Lei, IEEE Trans. Electron Devices, 41, 698 (1994).
15. J. W. Park, B. T. Ahn, and K. Lee, Jpn. J. Appl. Phys., Part 1, 34, 1436 (1995).
16. C. L. Fan and M. C. Chen, Electrochem. Solid-State Lett., 5, G75 (2002).
17. Y. H. Kim, M. S. Hwang, and H. J. Kim, J. Appl. Phys., 90, 3367 (2001).
18. R. E. Proano, R. S. Misage, and D. G. Ast, IEEE Trans. Electron Devices, 36, 1915 (1989).