High-performance poly-silicon TFTs using HfO2 gate dielectric

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 360-363

  Lin, Chia Pin ^a   Tsui, Bing Yue ^a   Yang, Ming Jui ^b   Huang, Ruei Hao ^b   Chien, Chao Hsin ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Hafnium dioxide (HfO2); High dielectric constant dielectric; Thin film transistors (TFTs)

Indexed keywords

DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; POLYSILICON; THRESHOLD VOLTAGE;

HAFNIUM DIOXIDE; HIGH DIELECTRIC-CONSTANT DIELECTRIC; ROLLOFF PROPERTY;

THIN FILM TRANSISTORS;

EID: 33646263586     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.872832     Document Type: Article

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