High-performance polycrystalline SiGe thin-film transistors using Al2O3 gate insulators

IEEE Electron Device Letters

Volumn 19, Issue 12, 1998, Pages 502-504

  Jin, Zhonghe ^a   Kwok, Hoi S ^b   Wong, Man ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Aluminum oxide; Display; Insulator; Interface; Polycrystalline silicon germanium alloys; Thin film transistors

Indexed keywords

ALUMINUM COMPOUNDS; DIELECTRIC FILMS; ELECTRIC INSULATING COATINGS; GATES (TRANSISTOR); PASSIVATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SPUTTER DEPOSITION;

FIELD EFFECT MOBILITY; POLYCRYSTALLINE SILICON-GERMANIUM ALLOYS;

THIN FILM TRANSISTORS;

EID: 0032292720     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.735760     Document Type: Article

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