Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension

IEEE Electron Device Letters

Volumn 22, Issue 4, 2001, Pages 179-181

  Lin, H C ^a,b   Yeh, K L ^c   Huang, R G ^c   Lin, C Y ^b   Huang, T Y ^a,b,c  

^a IEEE   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Ambipolar; Field induced drain; Schottky barrier; Thin film transistor

Indexed keywords

AMBIPOLAR DEVICES; FIELD-INDUCED DRAIN (FID);

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); LEAKAGE CURRENTS; PASSIVATION; SCHOTTKY BARRIER DIODES;

THIN FILM TRANSISTORS;

EID: 0035307495     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.915606     Document Type: Article

References (9)

1. SB-IGFET: An insulated-gate field-effect transistor using Schottloy barrier contacts for source and drain
2. Silicon field-effect transistor based on quantum tunneling
3. Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on SOI substrate and demonstration of sub-50 nm n-type device with metal gate
4. Pt-Si source and drain SOI-MOSFET operating in bi-channel mode
5. Sub-40 nm PtSi Schottky source/drain metal-oxide-semiconductor field-effect transistor
6. A 25-nm-long channel metal-gate p-type Schottky source/drain MOSFET on SOI substrate
7. A novel implantless MOS thin-film transistor with simple processing, excellent performance and ambipolar operation capability
8. A simpler 100-V polysilicon TFT with improved turn-on characteristics
9. Device sensitivity of field-plated polysilicon high-voltage TFT's and their application to low-voltage operation