High-performance polysilicon TFTs using stacked Pr2 O3/oxynitride gate dielectric

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 353-356

  Pan, Tung Ming ^a   Wu, Tin Wei ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Gate dielectric; High k; Pr2O3; SiO Ny buffer layer; Smooth interface; Thin film transistors (TFTs)

Indexed keywords

BUFFER LAYERS; CARRIER MOBILITY; GATE DIELECTRICS; POLYSILICON;

CURRENT RATIO; DRIVING CURRENT; SMOOTH INTERFACE; SUBTHRESHOLD SWING;

THIN FILM TRANSISTORS;

EID: 41749101745     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.917119     Document Type: Article

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