Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC

Journal of Crystal Growth

Volumn 321, Issue 1, 2011, Pages 8-14

  Krishnan, Bharat ^a   Kotamraju, Siva ^a   Thirumalai, Rooban Venkatesh K G ^a   Koshka, Yaroslav ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

A1. Crystal morphology; A1. Doping; A3. Chemical vapor deposition; A3. Chloride vapor phase epitaxy; A3. Hot wall epitaxy; B2. Semiconducting silicon carbide

Indexed keywords

A1. DOPING; A3. CHEMICAL VAPOR DEPOSITION; A3. CHLORIDE VAPOR PHASE EPITAXY; A3. HOT WALL EPITAXY; B2. SEMICONDUCTING SILICON CARBIDE; CRYSTAL MORPHOLOGIES;

CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; EPILAYERS; EPITAXIAL GROWTH; GROWTH TEMPERATURE; MORPHOLOGY; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON CARBIDE; VANADIUM; VANADIUM ALLOYS; VAPOR PHASE EPITAXY; VAPORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79953236387     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.02.010     Document Type: Article

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