Deep levels and compensation in high purity semi-insulating 4H-SiC

Materials Research Society Symposium Proceedings

Volumn 911, Issue , 2006, Pages 213-218

  Mitchel, W C ^a   Mitchell, W D ^a   Smith, H E ^a,b   Carlos, W E ^c   Glaser, E R ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF DAYTON   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALS; HALL EFFECT; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY;

CARBON VACANCY; CARBON-SILICON DIVACANCY; INTRINSIC DEFECTS; RESIDUAL NITROGEN;

SILICON CARBIDE;

EID: 33750319779     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0911-b06-02     Document Type: Conference Paper

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