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Volumn 389-393, Issue 1, 2002, Pages 199-202
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Hot-wall CVD growth of 4H-SiC using Si2Cl6+C 3H8+H2 system
a
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Author keywords
Cold wall CVD; Hot wall CVD; Scratch like defects; Shallow round pits; Si 2Cl6; Triangular defects; Triangular pits
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Indexed keywords
CARBON;
EPITAXIAL GROWTH;
HEATING;
RADIATION EFFECTS;
SILICON CARBIDE;
SUBSTRATES;
THERMAL EFFECTS;
CHLORINE COMPOUNDS;
MORPHOLOGY;
SURFACE MORPHOLOGY;
COLD-WALL CVD;
HOT-WALL CVD;
SCRATCH-LIKE DEFECTS;
SHALLOW ROUND PITS;
TRIANGULAR DEFECTS;
TRIANGULAR PITS;
CARBON RICH;
CVD GROWTHS;
HOMOEPITAXIAL GROWTH;
RADIATION HEATING;
ROUND PIT;
SILICON RICH;
SUBSTRATE TEMPERATURE;
SUSCEPTORS;
CHEMICAL VAPOR DEPOSITION;
SUBSTRATES;
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EID: 34247250242
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: None Document Type: Article |
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Times cited : (4)
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References (7)
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