Development of large diameter high-purity semi-insulating 4H-SiC wafers for Microwave devices

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 35-40

  Jenny, J R ^a   Malta, D P ^a   Calus, M R ^a   Muller St G ^a   Powell, A R ^a   Tsvetkov, V F ^a   Hobgood, H McD ^a   Glass, R C ^a   Carter Jr , C H ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

4H SiC; DLTS; EPR; Hall effect; High purity semi insulating; HPSI; LTPL; OAS; PVT; Resistivity; Seeded sublimation; SIMS; Thermal conductivity

Indexed keywords

CONTAMINATION; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; FERMI LEVEL; HALL EFFECT; HIGH ELECTRON MOBILITY TRANSISTORS; IMPURITIES; MESFET DEVICES; MICROWAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS; THERMAL CONDUCTIVITY;

4H-SIC; HIGH PURITY SEMI INSULATING (HPSI); LTPL; OAS; RESISTIVITY;

SILICON CARBIDE;

EID: 8744266315     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.35     Document Type: Conference Paper

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