Development of high-frequency SiC-MESFETs

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 86, Issue 11, 2003, Pages 1-10

  Arai, Manabu ^a,b   Honda, Hirotake ^a,b   Ono, Shuichi ^a,b   Sawazaki, Hiroshi ^a,b   Ogata, Makoto ^a,b  

^a JAPAN RADIO CO LTD   (Japan)

^b Ultra Low Loss Pwr Device TRB   (Japan)

Author keywords

High frequency; High output power; MESFET; Output power density; SiC

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; INTEGRATED CIRCUIT TESTING; POWER INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON CARBIDE; THERMAL CONDUCTIVITY;

HIGH FREQUENCY TRANSISTORS; POWER TRANSISTORS;

MESFET DEVICES;

EID: 0242406150     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.10160     Document Type: Article

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