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Volumn 3, Issue 5, 2009, Pages 157-159

Use of chlorinated carbon and silicon precursors for epitaxial growth of 4H-SiC at very high growth rates

Author keywords

[No Author keywords available]

Indexed keywords

CARBON PRECURSORS; DROPLET FORMATION; GASPHASE; HIGH GROWTH RATE; HIGH QUALITY; HOMOGENEOUS NUCLEATION; LOW TEMPERATURE EPITAXIAL GROWTH; LOW TEMPERATURES; LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPY; MORPHOLOGY DEGRADATION; PRECURSOR FLOW RATES; SILICON PRECURSORS; SILICON TETRACHLORIDE; TEMPERATURE INCREASE; TIME-RESOLVED LUMINESCENCE;

EID: 71149094833     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200903149     Document Type: Article
Times cited : (14)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.