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Volumn 3, Issue 5, 2009, Pages 157-159
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Use of chlorinated carbon and silicon precursors for epitaxial growth of 4H-SiC at very high growth rates
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Author keywords
[No Author keywords available]
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Indexed keywords
CARBON PRECURSORS;
DROPLET FORMATION;
GASPHASE;
HIGH GROWTH RATE;
HIGH QUALITY;
HOMOGENEOUS NUCLEATION;
LOW TEMPERATURE EPITAXIAL GROWTH;
LOW TEMPERATURES;
LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPY;
MORPHOLOGY DEGRADATION;
PRECURSOR FLOW RATES;
SILICON PRECURSORS;
SILICON TETRACHLORIDE;
TEMPERATURE INCREASE;
TIME-RESOLVED LUMINESCENCE;
DROP FORMATION;
EPILAYERS;
NUCLEATION;
PHOTOLUMINESCENCE SPECTROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON CARBIDE;
EPITAXIAL GROWTH;
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EID: 71149094833
PISSN: 18626254
EISSN: 18626270
Source Type: Journal
DOI: 10.1002/pssr.200903149 Document Type: Article |
Times cited : (14)
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References (10)
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