High temperature Hall effect measurements of semi-insulating 4H-SiC substrates

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1693-1697

  Mitchel, W C ^a   Mitchell, William D ^a   Zvanut, M E ^b   Landis, G ^a,c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

^c UNIVERSITY OF DAYTON   (United States)

Author keywords

Deep levels; Hall effect; Semi insulating SiC

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ENERGY GAP; HALL EFFECT; HIGH TEMPERATURE EFFECTS;

DONOR LEVELS; PHYSICAL VAPOR TRANSPORT (PVT); SEMI-INSULATING SUBSTRATES;

SILICON CARBIDE;

EID: 3142744876     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.02.025     Document Type: Conference Paper

References (9)

1. Jenny J.R., Muller St.G., Powell A., Tsvetkov V.F., Hobgood H.M., Glass R.C., et al. J. Electron. Mater. 31:2002;366.
2. Ellison A., Magnusson B., Hemmingsson C., Magnusson W., Iakimov T., Storasta L., et al. Mater. Res. Soc. Symp. 640:2001;H1.2.1.
3. Jenny J.R., Skowronski J., Mitchel W.C., Hobgood H.M., Glass R.C., Augustine G., et al. Appl. Phys. Lett. 68:1996;1963.
4. Zvanut M.E., Konovalov V.V. Appl. Phys. Lett. 80:2002;410.
5. Kalabukhova E.N., Lukin S.N., Saxler A., Mitchel W.C., Smith S.R., Solomon J.S., et al. Phys. Rev. B. 64:2001;235202.
6. Son N.T., Magnusson B., Jenzen E. Appl. Phys. Lett. 81:2002;3945.
7. Carlos W.E., Glaser E.R., Shanabrook B.V., Kennedy T.A. Bull. Am. Phys. Soc. 48:2003;1322.
8. Ellison A, Magnusson B, Bergman P, Forsberg U, Henelius N, Janzen E, et al. In: Mader R, Camassel J, Blanquet E, editors. Silicon carbide and related materials 2003. Switzerland: Trans Tech Publications; 2004. p. 9.
9. Look D.C. Willardson R.K., Beer A.C. Semiconductors and semimetals. 19:1983;75 Academic, New York.