Vanadium doping of 4H SiC from a solid source: Photoluminescence investigation

Journal of Electronic Materials

Volumn 30, Issue 3, 2001, Pages 220-223

  Koshka, Y ^a   Mazzola, M ^a   Yingquan, S ^a   Pittman, C U ^b  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

^b MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

Compensation; Photoluminescence; Solid source doping; Vanadium doping

Indexed keywords

CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; SUBSTRATES; VANADIUM;

PHOTOLUMINESCENCE SPECTROSCOPY; SOLID SOURCE DOPING; VANADIUM DOPING;

SILICON CARBIDE;

EID: 0035272523     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0019-x     Document Type: Article

References (11)