Effect of boron on the resistivity of compensated 4H-SiC

Journal of Electronic Materials

Volumn 32, Issue 5, 2003, Pages 452-457

  Ciechonski, R R ^a   Syvajarvi M ^a   Kakanakova Georgieva, A ^a   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Carbon vacancy; Compensation; Deep levels; DLTS; High resistivity; Semi insulating; SiC sublimation epitaxy

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; INSULATING MATERIALS; SECONDARY ION MASS SPECTROMETRY; SUBLIMATION; TRACE ELEMENTS;

SEMI-INSULATING (SI) SEMICONDUCTORS;

SILICON CARBIDE;

EID: 0037904837     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0177-0     Document Type: Conference Paper

References (23)

1. G. Augustine, H.McD. Hobgood, V. Balakrishna, G.T. Dunne, R.H Hopkins, R.N. Thomas, W.A. Doolittle, and A. Rohatgi, Mater. Sci. Forum 264-268, 9 (1998).
2. M. Bickermann, D. Hofmann, T.L. Straubinger, R. Weingaertner, and A. Winnacker, Mater. Sci. Forum 139, 389 (2002).
3. O. Noblanc, C. Arnodo, C. Dua, E. Chartier, and C. Brylinski, Mater. Sci. Forum 338-342, 1247 (2000).
4. St.G. Mueller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H.McD. Hobgood, J.R. Jenny, R. Leonard, D. Malta, A. Powell, V.F. Tsvetkov, S. Allen, J. Palmour, and C.H. Carter, Jr., Mater. Sci. Forum 389-393, 23 (2002).
5. J.R. Jenny, S.G. Mueller, A. Powell, V.F. Tvetskov, H.McD. Hobgood, R.C Glass, and C.H. Carter, Jr., J. Electron. Mater. 31, 366(2002).
6. A. Ellison, B. Magnusson, C. Hemmingsson, W. Magnusson, T. Iakimov, L. Storasta, A. Henry, N. Henelius, and E. Janzén, Mater. Res. Symp. Proc. 640, H1.2 (2001).
7. A. Ellison, B. Magnusson, N.T. Son, L. Storasta, and E. Janzén, Mater. Sci. Forum 33, 433 (2003).
8. A. Kakanakova-Georgieva, R. Yakimova, J. Zhang, L. Storasta, M. Syväjärvi, and E. Janzén, Mater. Sci. Forum 389-393, 259 (2002).
9. H. Itoh, T. Troffer, C. Peppermeuller, and G. Pensl, Appl. Phys. Lett. 73, 1427 (1998).
10. M. Syväjärvi, R. Yakimova, A. Kakanakova-Georgieva, M. Tuominen, M.F. MacMillan, A. Henry, Q. Wahab, C. Hemmingsson, and E. Janzén, J. Cryst. Growth 197, 155 (1999).
11. D.V. Lang, J. Appl. Phys. 45, 3023 (1974).
12. R. Brunwin, B. Hamilton, P. Jordan, and A.R. Peaker, Electron. Lett. 15, 349 (1979).
13. L. J. Brillson, S. Chang, A.D. Raisanen, and I.M. Vitomirov, Scanning Microsc. Suppl. 9, 173 (1995).
14. C.G. Hemmingsson, N.T. Son, O. Kordina, J.P. Bergman, and E. Janzén, J. Appl. Phys. 81, 6155 (1997).
15. N.T. Son, P.N. Hai, and E. Janzén, Phys. Rev. B 63, 201201 (2001).
16. V.I. Levin, Yu.M. Tairov, and V.F. Tsvetskov, Sov. Phys. Semicond. 18, 747 (1984).
17. Yu.M. Tairov and V.F. Tsvetskov, Progr. Crystal Growth Characterization 7, 125 (1983).
18. Yu.A. Vodakov and E.N. Mokhov, Phys. Solid State 41, 742 (1999).
19. A.A. Lebedev, Semiconductors 33, 107 (1999).
20. A. Kakanakova-Georgieva, R. Yakimova, A. Henry, M.K. Linnarsson, M. Syväjärvi, and E. Janzén, J. Appl. Phys 91, 2890 (2002)
21. M. Bockstedte, A. Mattausch, and O. Pankratov, Mater. Sci. Forum 353, 447 (2001).
22. L. Storasta, J.P. Bergman, C. Hallin, and E. Janzén, Mater. Sci. Forum 389-393, 549 (2002).
23. C.G. Hemmingsson, N.T. Son, A. Ellison, J. Zhang, and E. Janzén, Phys Rev. B 58, 10119 (1998).