Vanadium-doped semi-insulating 6H-SiC for microwave power device applications

Journal of Materials Science and Technology

Volumn 25, Issue 1, 2009, Pages 102-104

  Ning, Li'na ^a   Feng, Zhihong ^b   Wang, Yingmin ^a   Zhang, Kai ^a   Feng, Zhen ^b   Xu, Xiangang ^a  

^a SHANDONG UNIVERSITY   (China)

^b HEBEI SEMICONDUCTOR RESEARCH INSTITUTE   (China)

Author keywords

AlGaN GaN HEMT; Semi insulating; Silicon Carbide; Vanadium doped

Indexed keywords

ALUMINA; ALUMINUM; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); CRYSTAL IMPURITIES; CRYSTALS; DOPING (ADDITIVES); ELECTRON GAS; FIBER LASERS; GALLIUM NITRIDE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON WAFERS; TRANSITION METALS; TWO DIMENSIONAL ELECTRON GAS; VANADIUM; VANADIUM ALLOYS;

ALGAN/GAN; ALGAN/GAN HEMT; BULK CRYSTALS; CAPACITANCE VOLTAGES; CHARGE CARRIER CONCENTRATIONS; CONCENTRATION OF; GATE WIDTHS; HIGH ELECTRON MOBILITIES; HIGH RESISTIVITIES; IMPURITIES IN; MASS-SPECTROMETRY; MAXIMUM OUTPUT POWER; MICROWAVE POWER DEVICES; ROOM TEMPERATURES; SEMI-INSULATING; SEMI-INSULATING PROPERTIES; SIC SUBSTRATES; TWO-DIMENSIONAL ELECTRON GASSES (2DEG); VANADIUM DOPING;

SUBSTRATES;

EID: 60949108589     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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