Compensation mechanism in high purity semi-insulating 4H-SiC

Journal of Applied Physics

Volumn 101, Issue 5, 2007, Pages

  Mitchel, W C ^a   Mitchell, William D ^a   Smith, H E ^b   Landis, G ^b   Smith, S R ^b   Glaser, E R ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF DAYTON   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON CONCENTRATIONS; CHARGE BALANCE EQUATIONS; COMPENSATION MECHANISM;

ACTIVATION ENERGY; CARRIER CONCENTRATION; ENERGY GAP; FERMI LEVEL; HALL EFFECT; SECONDARY ION MASS SPECTROMETRY;

SILICON CARBIDE;

EID: 33947324689     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2437677     Document Type: Article

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